Difference between revisions of "Material:Silicon"

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'''Silicon''' is crystalline solid with a diamond cubic crystal structure. Silicon wafers are frequently used as substrates for samples used in [[GISAXS]]. Si wafers make ideal substrates because they are very smooth at the atomic/nano scale, and are also very flat across larger (macroscale) distances. Note, however, that sample preparation (e.g. spin coating) may stress the wafer and 'kink' it, with effects that can be visible in GISAXS and especially [[reflectivity]] experiments.
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'''Silicon''' is crystalline solid with a [[Lattice:Diamdon|diamond cubic]] crystal structure. Silicon wafers are frequently used as [[GISAXS_sample_requirements#Substrate|substrates]] for samples used in [[GISAXS]]. Si wafers make ideal substrates because they are very smooth at the atomic/nano scale, and are also very flat across larger (macroscale) distances. Note, however, that sample preparation (e.g. spin coating) may stress the wafer and 'kink' it, with effects that can be visible in GISAXS and especially [[reflectivity]] experiments.
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==[[Scattering]]==
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Because silicon is normally a single-crystal, it leads to no discernible peaks on the [[detector]] unless the crystal [[lattice]] is aligned to satisfy the [[Bragg's law|Bragg condition]] (i.e. the [[Ewald sphere]] must intercept a peak in the [[reciprocal-space|reciprocal lattice]]).
  
 
==Properties==
 
==Properties==
 
* Density: 2.3290 g/cm<sup>3</sup>
 
* Density: 2.3290 g/cm<sup>3</sup>
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* Neutron [[SLD]]: 2.074×10<sup>−6</sup> Å<sup>−2</sup>
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{| class="wikitable"
 +
|-
 +
! Material
 +
! density (g/cm<sup>3</sup>)
 +
! X-ray energy (keV)
 +
! X-ray wavelength (Å)
 +
! critical angle (°)
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! ''q<sub>c</sub>'' (Å<sup>−1</sup>)
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! SLD (10<sup>−6</sup>Å<sup>−2</sup>)
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|-
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| [[Material:Silicon|Si]]
 +
| 2.3290
 +
| 2.0
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| 6.20
 +
| 0.824
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| 0.0291
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| 16.89
 +
|-
 +
|
 +
|
 +
| 4.0
 +
| 3.10
 +
| 0.451
 +
| 0.0319
 +
| 20.28
 +
|-
 +
|
 +
|
 +
| 8.0
 +
| 1.55
 +
| 0.224
 +
| 0.0317
 +
| 20.07
 +
|-
 +
|
 +
|
 +
| 12.0
 +
| 1.03
 +
| 0.149
 +
| 0.0317
 +
| 19.92
 +
|-
 +
|
 +
|
 +
| 13.5
 +
| 0.92
 +
| 0.132
 +
| 0.0316
 +
| 19.88
 +
|-
 +
|
 +
|
 +
| 16.0
 +
| 0.77
 +
| 0.112
 +
| 0.0316
 +
| 19.84
 +
|-
 +
|
 +
|
 +
| 24.0
 +
| 0.52
 +
| 0.07426
 +
| 0.0315
 +
| 19.77
 +
|-
 +
|}
 +
  
 
[[Image:Silicon-atomic scatt factor.png|400px|[[Atomic scattering factors]] (''f''<sub>1</sub> and ''f''<sub>2</sub>).]][[Image:Silicon-n.png|400px]]
 
[[Image:Silicon-atomic scatt factor.png|400px|[[Atomic scattering factors]] (''f''<sub>1</sub> and ''f''<sub>2</sub>).]][[Image:Silicon-n.png|400px]]
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[[Image:Silicon-crit.png|400px]][[Image:Silicon-crit_zoom.png|400px]]
 
[[Image:Silicon-crit.png|400px]][[Image:Silicon-crit_zoom.png|400px]]
  
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[[Image:Silicon-critq.png|400px]]
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[[Image:Silicon-critq.png|400px]][[Image:Silicon-SLD.png|400px]]
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[[Image:Silicon-AttLen.png|400px]][[Image:Silicon-mu.png|400px]]
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==Wafer transmission==
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Silicon is often used as a substrate. The [[transmission]] of a 'standard' (500 μm) Si wafer is:
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 +
{| class="wikitable"
 +
|-
 +
! Material
 +
! density (g/cm<sup>3</sup>)
 +
! X-ray energy (keV)
 +
! X-ray wavelength (Å)
 +
! transmission
 +
|-
 +
| [[Material:Silicon|Si]]
 +
| 2.3290
 +
| 2.0
 +
| 6.20
 +
| 0.000
 +
|-
 +
|
 +
|
 +
| 4.0
 +
| 3.10
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| 3&times;10<sup>−23</sup>
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|-
 +
|
 +
|
 +
| 8.0
 +
| 1.55
 +
| 0.0007
 +
|-
 +
|
 +
|
 +
| 9.0
 +
| 1.38
 +
| 0.006
 +
|-
 +
|
 +
|
 +
| 12.0
 +
| 1.03
 +
| 0.11
 +
|-
 +
|
 +
|
 +
| 16.0
 +
| 0.77
 +
| 0.39
 +
|-
 +
|
 +
|
 +
| 24.0
 +
| 0.52
 +
| 0.75
 +
|-
 +
|}
  
 
==See Also==
 
==See Also==
 
* [http://en.wikipedia.org/wiki/Silicon Wikipedia: Silicon]
 
* [http://en.wikipedia.org/wiki/Silicon Wikipedia: Silicon]
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*  Alexander Rack, Mario Scheel and Andreas N. Danilewsky [http://journals.iucr.org/m/issues/2016/02/00/ro5006/index.html Real-time direct and diffraction X-ray imaging of irregular silicon wafer breakage] ''IUCrJ'' '''2015''' [http://dx.doi.org/10.1107/S205225251502271X doi: 10.1107/S205225251502271X]

Latest revision as of 13:28, 7 February 2019

Silicon is crystalline solid with a diamond cubic crystal structure. Silicon wafers are frequently used as substrates for samples used in GISAXS. Si wafers make ideal substrates because they are very smooth at the atomic/nano scale, and are also very flat across larger (macroscale) distances. Note, however, that sample preparation (e.g. spin coating) may stress the wafer and 'kink' it, with effects that can be visible in GISAXS and especially reflectivity experiments.

Scattering

Because silicon is normally a single-crystal, it leads to no discernible peaks on the detector unless the crystal lattice is aligned to satisfy the Bragg condition (i.e. the Ewald sphere must intercept a peak in the reciprocal lattice).

Properties

  • Density: 2.3290 g/cm3
  • Neutron SLD: 2.074×10−6 Å−2
Material density (g/cm3) X-ray energy (keV) X-ray wavelength (Å) critical angle (°) qc (Å−1) SLD (10−6Å−2)
Si 2.3290 2.0 6.20 0.824 0.0291 16.89
4.0 3.10 0.451 0.0319 20.28
8.0 1.55 0.224 0.0317 20.07
12.0 1.03 0.149 0.0317 19.92
13.5 0.92 0.132 0.0316 19.88
16.0 0.77 0.112 0.0316 19.84
24.0 0.52 0.07426 0.0315 19.77


Atomic scattering factors (f1 and f2).Silicon-n.png

Silicon-crit.pngSilicon-crit zoom.png

Silicon-critq.pngSilicon-SLD.png

Silicon-AttLen.pngSilicon-mu.png

Wafer transmission

Silicon is often used as a substrate. The transmission of a 'standard' (500 μm) Si wafer is:

Material density (g/cm3) X-ray energy (keV) X-ray wavelength (Å) transmission
Si 2.3290 2.0 6.20 0.000
4.0 3.10 3×10−23
8.0 1.55 0.0007
9.0 1.38 0.006
12.0 1.03 0.11
16.0 0.77 0.39
24.0 0.52 0.75

See Also

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