Difference between revisions of "Material:Silicon"
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| − | '''Silicon''' is crystalline solid with a diamond cubic crystal structure. Silicon wafers are frequently used as substrates for samples used in [[GISAXS]]. Si wafers make ideal substrates because they are very smooth at the atomic/nano scale, and are also very flat across larger (macroscale) distances. Note, however, that sample preparation (e.g. spin coating) may stress the wafer and 'kink' it, with effects that can be visible in GISAXS and especially [[reflectivity]] experiments. | + | '''Silicon''' is crystalline solid with a [[Lattice:Diamdon|diamond cubic]] crystal structure. Silicon wafers are frequently used as [[GISAXS_sample_requirements#Substrate|substrates]] for samples used in [[GISAXS]]. Si wafers make ideal substrates because they are very smooth at the atomic/nano scale, and are also very flat across larger (macroscale) distances. Note, however, that sample preparation (e.g. spin coating) may stress the wafer and 'kink' it, with effects that can be visible in GISAXS and especially [[reflectivity]] experiments. |
| − | ==Scattering== | + | ==[[Scattering]]== |
Because silicon is normally a single-crystal, it leads to no discernible peaks on the [[detector]] unless the crystal [[lattice]] is aligned to satisfy the [[Bragg's law|Bragg condition]] (i.e. the [[Ewald sphere]] must intercept a peak in the [[reciprocal-space|reciprocal lattice]]). | Because silicon is normally a single-crystal, it leads to no discernible peaks on the [[detector]] unless the crystal [[lattice]] is aligned to satisfy the [[Bragg's law|Bragg condition]] (i.e. the [[Ewald sphere]] must intercept a peak in the [[reciprocal-space|reciprocal lattice]]). | ||
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| 19.92 | | 19.92 | ||
|- | |- | ||
| − | + | | | |
| + | | | ||
| + | | 13.5 | ||
| + | | 0.92 | ||
| + | | 0.132 | ||
| + | | 0.0316 | ||
| + | | 19.88 | ||
| + | |- | ||
| | | | ||
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[[Image:Silicon-AttLen.png|400px]][[Image:Silicon-mu.png|400px]] | [[Image:Silicon-AttLen.png|400px]][[Image:Silicon-mu.png|400px]] | ||
| + | |||
| + | ==Wafer transmission== | ||
| + | Silicon is often used as a substrate. The [[transmission]] of a 'standard' (500 μm) Si wafer is: | ||
| + | |||
| + | {| class="wikitable" | ||
| + | |- | ||
| + | ! Material | ||
| + | ! density (g/cm<sup>3</sup>) | ||
| + | ! X-ray energy (keV) | ||
| + | ! X-ray wavelength (Å) | ||
| + | ! transmission | ||
| + | |- | ||
| + | | [[Material:Silicon|Si]] | ||
| + | | 2.3290 | ||
| + | | 2.0 | ||
| + | | 6.20 | ||
| + | | 0.000 | ||
| + | |- | ||
| + | | | ||
| + | | | ||
| + | | 4.0 | ||
| + | | 3.10 | ||
| + | | 3×10<sup>−23</sup> | ||
| + | |- | ||
| + | | | ||
| + | | | ||
| + | | 8.0 | ||
| + | | 1.55 | ||
| + | | 0.0007 | ||
| + | |- | ||
| + | | | ||
| + | | | ||
| + | | 9.0 | ||
| + | | 1.38 | ||
| + | | 0.006 | ||
| + | |- | ||
| + | | | ||
| + | | | ||
| + | | 12.0 | ||
| + | | 1.03 | ||
| + | | 0.11 | ||
| + | |- | ||
| + | | | ||
| + | | | ||
| + | | 16.0 | ||
| + | | 0.77 | ||
| + | | 0.39 | ||
| + | |- | ||
| + | | | ||
| + | | | ||
| + | | 24.0 | ||
| + | | 0.52 | ||
| + | | 0.75 | ||
| + | |- | ||
| + | |} | ||
==See Also== | ==See Also== | ||
* [http://en.wikipedia.org/wiki/Silicon Wikipedia: Silicon] | * [http://en.wikipedia.org/wiki/Silicon Wikipedia: Silicon] | ||
| + | * Alexander Rack, Mario Scheel and Andreas N. Danilewsky [http://journals.iucr.org/m/issues/2016/02/00/ro5006/index.html Real-time direct and diffraction X-ray imaging of irregular silicon wafer breakage] ''IUCrJ'' '''2015''' [http://dx.doi.org/10.1107/S205225251502271X doi: 10.1107/S205225251502271X] | ||
Latest revision as of 13:28, 7 February 2019
Silicon is crystalline solid with a diamond cubic crystal structure. Silicon wafers are frequently used as substrates for samples used in GISAXS. Si wafers make ideal substrates because they are very smooth at the atomic/nano scale, and are also very flat across larger (macroscale) distances. Note, however, that sample preparation (e.g. spin coating) may stress the wafer and 'kink' it, with effects that can be visible in GISAXS and especially reflectivity experiments.
Scattering
Because silicon is normally a single-crystal, it leads to no discernible peaks on the detector unless the crystal lattice is aligned to satisfy the Bragg condition (i.e. the Ewald sphere must intercept a peak in the reciprocal lattice).
Properties
- Density: 2.3290 g/cm3
- Neutron SLD: 2.074×10−6 Å−2
| Material | density (g/cm3) | X-ray energy (keV) | X-ray wavelength (Å) | critical angle (°) | qc (Å−1) | SLD (10−6Å−2) |
|---|---|---|---|---|---|---|
| Si | 2.3290 | 2.0 | 6.20 | 0.824 | 0.0291 | 16.89 |
| 4.0 | 3.10 | 0.451 | 0.0319 | 20.28 | ||
| 8.0 | 1.55 | 0.224 | 0.0317 | 20.07 | ||
| 12.0 | 1.03 | 0.149 | 0.0317 | 19.92 | ||
| 13.5 | 0.92 | 0.132 | 0.0316 | 19.88 | ||
| 16.0 | 0.77 | 0.112 | 0.0316 | 19.84 | ||
| 24.0 | 0.52 | 0.07426 | 0.0315 | 19.77 |
Wafer transmission
Silicon is often used as a substrate. The transmission of a 'standard' (500 μm) Si wafer is:
| Material | density (g/cm3) | X-ray energy (keV) | X-ray wavelength (Å) | transmission |
|---|---|---|---|---|
| Si | 2.3290 | 2.0 | 6.20 | 0.000 |
| 4.0 | 3.10 | 3×10−23 | ||
| 8.0 | 1.55 | 0.0007 | ||
| 9.0 | 1.38 | 0.006 | ||
| 12.0 | 1.03 | 0.11 | ||
| 16.0 | 0.77 | 0.39 | ||
| 24.0 | 0.52 | 0.75 |
See Also
- Wikipedia: Silicon
- Alexander Rack, Mario Scheel and Andreas N. Danilewsky Real-time direct and diffraction X-ray imaging of irregular silicon wafer breakage IUCrJ 2015 doi: 10.1107/S205225251502271X
