Difference between revisions of "Resonant reflectivity"
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[[X-ray]] '''[[reflectivity]]''' experiments can be performed near the resonant [[absorption]] edge of one of the elements in the multi-layer stack, thereby highlighting the contribution of this species/layer. More generally, multiple reflectivity experiments at different [[x-ray energy|x-ray energies]] can be used to disambiguated the distribution of different elements. | [[X-ray]] '''[[reflectivity]]''' experiments can be performed near the resonant [[absorption]] edge of one of the elements in the multi-layer stack, thereby highlighting the contribution of this species/layer. More generally, multiple reflectivity experiments at different [[x-ray energy|x-ray energies]] can be used to disambiguated the distribution of different elements. | ||
| + | |||
| + | ==References== | ||
| + | * M. Nayak, P. C. Pradhan and G. S. Lodha [http://scripts.iucr.org/cgi-bin/paper?ge5012 Element-specific structural analysis of Si/B4C using resonant X-ray reflectivity] ''J. Appl. Cryst.'' '''2015''', 48. [http://dx.doi.org/10.1107/S1600576715005877 doi: 10.1107/S1600576715005877] | ||
==See Also== | ==See Also== | ||
| − | * | + | * [[RSoXS]] |
Latest revision as of 08:59, 27 June 2015
X-ray reflectivity experiments can be performed near the resonant absorption edge of one of the elements in the multi-layer stack, thereby highlighting the contribution of this species/layer. More generally, multiple reflectivity experiments at different x-ray energies can be used to disambiguated the distribution of different elements.
References
- M. Nayak, P. C. Pradhan and G. S. Lodha Element-specific structural analysis of Si/B4C using resonant X-ray reflectivity J. Appl. Cryst. 2015, 48. doi: 10.1107/S1600576715005877
